Invention Grant
- Patent Title: Defects annealing and impurities activation in semiconductors at thermodynamically non-stable conditions
- Patent Title (中): 在热力学非稳定条件下缺陷半导体中的退火和杂质活化
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Application No.: US15015381Application Date: 2016-02-04
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Publication No.: US09543168B2Publication Date: 2017-01-10
- Inventor: Boris N. Feigelson , Jordan Greenlee , Travis J. Anderson , Francis J. Kub
- Applicant: The United States of America, as represented by the Secretary of the Navy
- Applicant Address: US DC Washington
- Assignee: The United States of America, as represented by the Secretary of the Navy
- Current Assignee: The United States of America, as represented by the Secretary of the Navy
- Current Assignee Address: US DC Washington
- Agency: US Naval Research Laboratory
- Agent Joslyn Barritt
- Main IPC: H01L33/00
- IPC: H01L33/00 ; H01L21/02 ; H01L21/324 ; H01L21/225 ; H01L23/34
Abstract:
A symmetric multicycle rapid thermal annealing (SMRTA) method for annealing a semiconductor material without the material decomposing. The SMRTA method includes a first long-time annealing at a first temperature at which the material is thermodynamically stable, followed by multicycle rapid thermal annealing (MRTA) at temperatures at which the material is not thermodynamically stable, followed in turn by a second long-time annealing at a second temperature at which the material is thermodynamically stable. The SMRTA method can be used to form p-type and n-type semiconductor regions in doped III-nitride semiconductors, SiC, and diamond.
Public/Granted literature
- US20160233108A1 Defects Annealing and Impurities Activation in Semiconductors at Thermodynamically Non-Stable Conditions Public/Granted day:2016-08-11
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