Invention Grant
- Patent Title: Semiconductor device and method of manufacturing the same
- Patent Title (中): 半导体装置及其制造方法
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Application No.: US14641718Application Date: 2015-03-09
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Publication No.: US09543194B2Publication Date: 2017-01-10
- Inventor: Kiyomitsu Yoshida
- Applicant: KABUSHIKI KAISHA TOSHIBA
- Applicant Address: JP Minato-ku
- Assignee: KABUSHIKI KAISHA TOSHIBA
- Current Assignee: KABUSHIKI KAISHA TOSHIBA
- Current Assignee Address: JP Minato-ku
- Agency: Oblon, McClelland, Maier & Neustadt, L.L.P.
- Main IPC: H01L21/768
- IPC: H01L21/768 ; H01L23/528 ; H01L23/532 ; H01L23/522
Abstract:
In one embodiment, a semiconductor device includes a first insulator, and conductors and second insulators alternately provided on the first insulator. Each second insulator of the second insulators has a first side face adjacent to one of the conductors via a first air gap, a second side face adjacent to one of the conductors via a second air gap, first lower faces in contact with the first insulator, and second lower faces provided above the first insulator via third air gaps.
Public/Granted literature
- US20160163581A1 SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME Public/Granted day:2016-06-09
Information query
IPC分类:
