Invention Grant
- Patent Title: Method of fabricating semiconductor device
- Patent Title (中): 制造半导体器件的方法
-
Application No.: US14712170Application Date: 2015-05-14
-
Publication No.: US09543205B2Publication Date: 2017-01-10
- Inventor: Seung-Yeol Yang
- Applicant: Samsung Electronics Co., Ltd.
- Applicant Address: KR Gyeonggi-do
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR Gyeonggi-do
- Agency: Harness, Dickey & Pierce, P.L.C.
- Priority: KR10-2014-0143463 20141022
- Main IPC: H01L21/78
- IPC: H01L21/78 ; H01L23/00 ; H01L23/31 ; H01L21/56

Abstract:
The method includes disposing semiconductor chips on a package substrate having sawing lines, forming an encapsulant to cover the semiconductor chips on the package substrate, forming a package assembly by a first curing of the encapsulant, forming first grooves by cutting the encapsulant along the sawing lines, performing a second curing of the encapsulant, and dividing the package assembly into unit semiconductor packages by cutting the package substrate along the sawing lines and forming second grooves to overlap the first grooves.
Public/Granted literature
- US20160118299A1 METHOD OF FABRICATING SEMICONDUCTOR DEVICE Public/Granted day:2016-04-28
Information query
IPC分类: