Invention Grant
US09543219B2 Void monitoring device for measurement of wafer temperature variations
有权
用于测量晶片温度变化的空隙监测装置
- Patent Title: Void monitoring device for measurement of wafer temperature variations
- Patent Title (中): 用于测量晶片温度变化的空隙监测装置
-
Application No.: US14557819Application Date: 2014-12-02
-
Publication No.: US09543219B2Publication Date: 2017-01-10
- Inventor: Shawn A. Adderly , Samantha D. DiStefano , Mark J. Esposito , Jeffrey P. Gambino , Prakash Periasamy
- Applicant: GLOBALFOUNDRIES INC.
- Applicant Address: KY Grand Cayman
- Assignee: GLOBALFOUNDRIES INC.
- Current Assignee: GLOBALFOUNDRIES INC.
- Current Assignee Address: KY Grand Cayman
- Agency: Gibb & Riley, LLC
- Agent Anthony J. Canale
- Main IPC: H01L21/66
- IPC: H01L21/66 ; H01L21/768 ; H01L23/528

Abstract:
A method of monitoring a temperature of a plurality of regions in a substrate during a deposition process, the monitoring of the temperature including: forming, in the monitored plurality of regions, a plurality of metal structures each with a different metal pattern density, where each metal pattern density corresponds to a threshold temperature at or above which metal voids and surface roughness are formed in the plurality of metal structures, and detecting metal voids and surface roughness in the plurality of metal structures to determine the temperature of the monitored plurality of regions.
Public/Granted literature
- US20160155675A1 VOID MONITORING DEVICE FOR MEASUREMENT OF WAFER TEMPERATURE VARIATIONS Public/Granted day:2016-06-02
Information query
IPC分类: