Invention Grant
- Patent Title: Semiconductor device
- Patent Title (中): 半导体器件
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Application No.: US15023870Application Date: 2013-12-27
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Publication No.: US09543227B2Publication Date: 2017-01-10
- Inventor: Koichi Yoshimura , Kazuhiro Kurachi
- Applicant: Mitsubishi Electric Corporation
- Applicant Address: JP Tokyo
- Assignee: Mitsubishi Electric Corporation
- Current Assignee: Mitsubishi Electric Corporation
- Current Assignee Address: JP Tokyo
- Agency: Studebaker & Brackett PC
- International Application: PCT/JP2013/085148 WO 20131227
- International Announcement: WO2015/097874 WO 20150702
- Main IPC: H01L23/36
- IPC: H01L23/36 ; H01L23/40 ; H01L23/367 ; H01L23/34 ; H01L23/473 ; H01L23/373 ; H01L23/42 ; H01L25/07 ; H01L25/18 ; H01L23/498 ; H01L29/16 ; H01L29/739 ; H01L29/861

Abstract:
A semiconductor device (10) includes a metallic base plate (22) provided with an upper surface (22a) and a lower surface (22b), a plurality of insulating substrates (24) provided on the upper surface (22a), and a plurality of semiconductor elements (26) and (28) mounted side by side on the respective insulating substrates (24). Annular grooves (50) and (52) for storing insulating grease are provided on the lower surface (22b) of the base plate (22). A surface (40a) of a cooling fin (40) is superimposed on the lower surface (22b) with insulating grease (42) interposed therebetween and insides of the annular grooves (50) and (52) are filled with the insulating grease (42).
Public/Granted literature
- US20160240456A1 SEMICONDUCTOR DEVICE Public/Granted day:2016-08-18
Information query
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