Invention Grant
US09543227B2 Semiconductor device 有权
半导体器件

Semiconductor device
Abstract:
A semiconductor device (10) includes a metallic base plate (22) provided with an upper surface (22a) and a lower surface (22b), a plurality of insulating substrates (24) provided on the upper surface (22a), and a plurality of semiconductor elements (26) and (28) mounted side by side on the respective insulating substrates (24). Annular grooves (50) and (52) for storing insulating grease are provided on the lower surface (22b) of the base plate (22). A surface (40a) of a cooling fin (40) is superimposed on the lower surface (22b) with insulating grease (42) interposed therebetween and insides of the annular grooves (50) and (52) are filled with the insulating grease (42).
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