Invention Grant
- Patent Title: Semiconductor device, semiconductor integrated circuit device, and electronic device
- Patent Title (中): 半导体器件，半导体集成电路器件和电子器件
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Application No.: US14078623Application Date: 2013-11-13
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Publication No.: US09543228B2Publication Date: 2017-01-10
- Inventor: Kouichi Kanda , Nobumasa Hasegawa
- Applicant: FUJITSU LIMITED , FUJITSU SEMICONDUCTOR LIMITED
- Applicant Address: JP Kawasaki JP Yokohama
- Assignee: FUJITSU LIMITED,FUJITSU SEMICONDUCTOR LIMITED
- Current Assignee: FUJITSU LIMITED,FUJITSU SEMICONDUCTOR LIMITED
- Current Assignee Address: JP Kawasaki JP Yokohama
- Agency: Staas & Halsey LLP
- Priority: JP2012-249538 20121113
- Main IPC: H01L23/367
- IPC: H01L23/367 ; H01L23/48 ; H01L23/482 ; H01L23/522 ; H01L29/78 ; H01L23/00
Abstract:
A semiconductor device includes a semiconductor substrate; an active element configured to be formed on the semiconductor substrate; and a multi-layer wiring structure configured to be formed on the semiconductor substrate. A heat dissipation structure is provided in the multi-layer wiring structure. The upper end of the heat dissipation structure forms an external connection pad to be connected with an external wiring board, and the lower end of the heat dissipation structure makes contact with a surface of the semiconductor substrate outside of an element forming region for the active element.
Public/Granted literature
- US20140131860A1 SEMICONDUCTOR DEVICE, SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE, AND ELECTRONIC DEVICE Public/Granted day:2014-05-15
Information query
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