Invention Grant
- Patent Title: Semiconductor device and method of manufacturing the same
- Patent Title (中): 半导体装置及其制造方法
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Application No.: US14264788Application Date: 2014-04-29
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Publication No.: US09543230B2Publication Date: 2017-01-10
- Inventor: Yong Han
- Applicant: SK hynix Inc.
- Applicant Address: KR Gyeonggi-do
- Assignee: SK Hynix Inc.
- Current Assignee: SK Hynix Inc.
- Current Assignee Address: KR Gyeonggi-do
- Agency: IP & T Group LLP
- Priority: KR10-2013-0153172 20131210
- Main IPC: H01L21/768
- IPC: H01L21/768 ; H01L23/48 ; H01L27/115
Abstract:
The semiconductor device includes first interlayer insulating layers and first conductive patterns which are alternately stacked; a second interlayer insulating layer formed on the first interlayer insulating layers and the first conductive patterns; and a slit passing through the second interlayer insulating layer, the first interlayer insulating layers and the first conductive patterns to divide the first interlayer insulating layers and the first conductive patterns into stack structures.
Public/Granted literature
- US20150162263A1 SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME Public/Granted day:2015-06-11
Information query
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