Invention Grant
US09543245B2 Semiconductor sensor device and method of producing a semiconductor sensor device
有权
半导体传感器装置及半导体传感器装置的制造方法
- Patent Title: Semiconductor sensor device and method of producing a semiconductor sensor device
- Patent Title (中): 半导体传感器装置及半导体传感器装置的制造方法
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Application No.: US14441165Application Date: 2013-09-23
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Publication No.: US09543245B2Publication Date: 2017-01-10
- Inventor: Franz Schrank , Martin Schrems
- Applicant: ams AG
- Applicant Address: AT Unterpremstaetten
- Assignee: ams AG
- Current Assignee: ams AG
- Current Assignee Address: AT Unterpremstaetten
- Agency: McDermott Will & Emery LLP
- Priority: EP12191647 20121107
- International Application: PCT/EP2013/069705 WO 20130923
- International Announcement: WO2014/072114 WO 20140515
- Main IPC: G01N27/12
- IPC: G01N27/12 ; H01L23/528 ; H01L21/50 ; H01L23/00 ; H01L21/56 ; H01L23/31
Abstract:
The semiconductor device comprises a substrate (1) of semiconductor material with a front side (4) and an opposite rear side (7), a wiring layer (5) at the front side (4), a further wiring layer (8) at the rear side (7), and a through-substrate via (3) connecting the wiring layer (5) and the further wiring layer (8). A hot plate (24) is arranged on or in the substrate, and a sensor layer (21) is arranged in the vicinity of the hot plate. A mold compound (14) is arranged on the rear side (7) above the substrate (1), a cavity (17) is formed in the mold compound (14) to accommodate the sensor layer (21), and the cavity (17) is covered with a membrane (15).
Public/Granted literature
- US20150287674A1 SEMICONDUCTOR SENSOR DEVICE AND METHOD OF PRODUCING A SEMICONDUCTOR SENSOR DEVICE Public/Granted day:2015-10-08
Information query
