Invention Grant
- Patent Title: 3DIC interconnect devices and methods of forming same
- Patent Title (中): 3DIC互连设备及其形成方法
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Application No.: US14491757Application Date: 2014-09-19
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Publication No.: US09543257B2Publication Date: 2017-01-10
- Inventor: Shu-Ting Tsai , Jeng-Shyan Lin , Dun-Nian Yaung
- Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.
- Applicant Address: TW Hsin-Chu
- Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee Address: TW Hsin-Chu
- Agency: Slater Matsil, LLP
- Main IPC: H01L23/48
- IPC: H01L23/48 ; H01L25/065 ; H01L21/768 ; H01L23/58
Abstract:
An interconnect device and a method of forming the interconnect device are provided. Two integrated circuits are bonded together. A first opening is formed through one of the substrates. One or more dielectric films are formed along sidewalls of the first opening. A second opening is formed extending from the first opening to pads in the integrated circuits, while using some of the pads as hard masks. The first opening and the second opening are filled with a conductive material to form a conductive plug.
Public/Granted literature
- US20150348917A1 3DIC Interconnect Devices and Methods of Forming Same Public/Granted day:2015-12-03
Information query
IPC分类:
