Invention Grant
- Patent Title: Segmented bond pads and methods of fabrication thereof
- Patent Title (中): 分段接合焊盘及其制造方法
-
Application No.: US13958276Application Date: 2013-08-02
-
Publication No.: US09543260B2Publication Date: 2017-01-10
- Inventor: Albert Birner , Helmut Brech , Matthias Zigldrum
- Applicant: Infineon Technologies AG
- Applicant Address: DE Neubiberg
- Assignee: Infineon Technologies AG
- Current Assignee: Infineon Technologies AG
- Current Assignee Address: DE Neubiberg
- Agency: Slater Matsil, LLP
- Main IPC: H01L23/538
- IPC: H01L23/538 ; H01L23/00
Abstract:
In accordance with an embodiment of the present invention, a semiconductor device includes a first bond pad disposed at a first side of a substrate. The first bond pad includes a first plurality of pad segments. At least one pad segment of the first plurality of pad segments is electrically isolated from the remaining pad segments of the first plurality of pad segments.
Public/Granted literature
- US20150035171A1 Segmented Bond Pads and Methods of Fabrication Thereof Public/Granted day:2015-02-05
Information query
IPC分类:
