Bonding wire for semiconductor device use where both leaning failures and spring failures are suppressed by (1) in a cross-section containing the wire center and parallel to the wire longitudinal direction (wire center cross-section), there are no crystal grains with a ratio a/b of a long axis “a” and a short axis “b” of 10 or more and with an area of 15 μm2 or more (“fiber texture”), (2) when measuring a crystal direction in the wire longitudinal direction in the wire center cross-section, the ratio of crystal direction with an angle difference with respect to the wire longitudinal direction of 15° or less is, by area ratio, 10% to less than 50%, and (3) when measuring a crystal direction in the wire longitudinal direction at the wire surface, the ratio of crystal direction with an angle difference with respect to the wire longitudinal direction of 15° or less is, by area ratio, 70% or more. During the drawing step, a drawing operation with a rate of reduction of area of 15.5% or more is performed at least once. The final heat treatment temperature and the pre-final heat treatment temperature are made predetermined ranges.