Invention Grant
- Patent Title: Semiconductor device with discrete blocks
- Patent Title (中): 具有离散块的半导体器件
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Application No.: US14886775Application Date: 2015-10-19
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Publication No.: US09543278B2Publication Date: 2017-01-10
- Inventor: Ching-Wen Hsiao , Chen-Shien Chen , Wei Sen Chang , Shou-Cheng Hu
- Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.
- Applicant Address: TW Hsin-Chu
- Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee Address: TW Hsin-Chu
- Agency: Slater Matsil, LLP
- Main IPC: H01L21/44
- IPC: H01L21/44 ; H01L25/065 ; H01L23/538 ; H01L23/64 ; H01L23/00 ; H01L21/48 ; H01L21/56 ; H01L23/522 ; H01L23/50

Abstract:
A semiconductor device and a method of manufacture are provided. In particular, a semiconductor device using blocks, e.g., discrete connection blocks, having through vias and/or integrated passive devices formed therein are provided. Embodiments such as those disclosed herein may be utilized in PoP applications. In an embodiment, the semiconductor device includes a die and a connection block encased in a molding compound. Interconnection layers may be formed on surfaces of the die, the connection block and the molding compound. One or more dies and/or packages may be attached to the interconnection layers.
Public/Granted literature
- US20160111398A1 Semiconductor Device with Discrete Blocks Public/Granted day:2016-04-21
Information query
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