A manufacturing method of a semiconductor device includes: depositing a thin film semiconductor layer on a semiconductor substrate with an insulating film therebetween, the insulating film having been formed on a surface of the semiconductor substrate; ion-implanting first impurity ions into the thin film semiconductor layer under a condition where a range of the first impurity ions becomes smaller than a film thickness of the thin film semiconductor layer when being deposited; and selectively ion-implanting second impurity ions into the thin film semiconductor layer with a dose quantity more than a dose quantity of the first impurity ions, in which a diode for detecting temperature is formed by a region into which the first impurity ions have been implanted and a region into which the second impurity ions have been implanted in the thin film semiconductor layer.