Invention Grant
- Patent Title: Semiconductor device
- Patent Title (中): 半导体器件
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Application No.: US15007823Application Date: 2016-01-27
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Publication No.: US09543294B2Publication Date: 2017-01-10
- Inventor: Takaya Shimono
- Applicant: Toyota Jidosha Kabushiki Kaisha
- Applicant Address: JP Toyota-shi
- Assignee: Toyota Jidosha Kabushiki Kaisha
- Current Assignee: Toyota Jidosha Kabushiki Kaisha
- Current Assignee Address: JP Toyota-shi
- Agency: Dinsmore & Shohl LLP
- Priority: JP2015-023206 20150209
- Main IPC: H01L31/058
- IPC: H01L31/058 ; H01L27/06 ; H01L29/739 ; H01L23/36

Abstract:
A semiconductor device includes a semiconductor substrate; and a temperature sense diode fixed on the semiconductor substrate. The temperature sense diode includes: an anode electrode; a p-type semiconductor layer being in contact with the anode electrode; an n-type semiconductor layer being in contact with the p-type semiconductor layer; and a cathode electrode being in contact with the n-type semiconductor layer; and the anode electrode. The p-type semiconductor layer, the n-type semiconductor layer, and the cathode electrode are stacked along a thickness direction of the semiconductor substrate. An electric resistivity of the anode electrode or the cathode electrode whichever is located closer to the semiconductor substrate is lower than an electric resistivity of the n-type semiconductor layer and an electric resistivity of the p-type semiconductor layer.
Public/Granted literature
- US20160233214A1 SEMICONDUCTOR DEVICE Public/Granted day:2016-08-11
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