Invention Grant
- Patent Title: ESD clamp with auto biasing under high injection conditions
- Patent Title (中): 在高注射条件下具有自动偏置的ESD夹具
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Application No.: US14049888Application Date: 2013-10-09
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Publication No.: US09543296B2Publication Date: 2017-01-10
- Inventor: Vladislav Vashchenko
- Applicant: NATIONAL SEMICONDUCTOR CORPORATION
- Applicant Address: US CA Santa Clara
- Assignee: NATIONAL SEMICONDUCTOR CORPORATION
- Current Assignee: NATIONAL SEMICONDUCTOR CORPORATION
- Current Assignee Address: US CA Santa Clara
- Agent Jacqueline J. Garner; Charles A. Brill; Frank D. Cimino
- Main IPC: H01L27/07
- IPC: H01L27/07 ; H01L27/02
Abstract:
In a dual direction ESD protection circuit formed from multiple base-emitter fingers that include a SiGe base region, and a common sub-collector region, the I-V characteristics are adjusted by including P+ regions to define SCR structures that are operable to sink positive and negative ESD pulses, and adjusting the layout and distances between regions and the number of regions.
Public/Granted literature
- US20140034996A1 ESD CLAMP WITH AUTO BIASING UNDER HIGH INJECTION CONDITIONS Public/Granted day:2014-02-06
Information query
IPC分类:
