Invention Grant
US09543307B2 Vertical memory devices and methods of manufacturing the same 有权
垂直存储器件及其制造方法

Vertical memory devices and methods of manufacturing the same
Abstract:
A method of manufacturing a vertical memory device includes: providing a substrate including a cell array region and a peripheral circuit region; forming a mold structure in the cell array region; forming a mold protection film in a portion of the cell array region and the peripheral circuit region, the mold protection film contacting the mold structure; forming an opening for a common source line that passes through the mold structure and extends in a first direction perpendicular to a top surface of the substrate; forming a peripheral circuit contact hole that passes through the mold protection film and extends in the first direction in the peripheral circuit region; and simultaneously forming a first contact plug and a second contact plug, respectively, in the opening for the common source line and in the peripheral circuit contact hole.
Public/Granted literature
Information query
Patent Agency Ranking
0/0