Invention Grant
- Patent Title: Vertical memory devices and methods of manufacturing the same
- Patent Title (中): 垂直存储器件及其制造方法
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Application No.: US14792114Application Date: 2015-07-06
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Publication No.: US09543307B2Publication Date: 2017-01-10
- Inventor: Ha-Na Kim , Dae-Hyun Jang , Jung-Ik Oh
- Applicant: Ha-Na Kim , Dae-Hyun Jang , Jung-Ik Oh
- Applicant Address: KR Gyeonggi-Do
- Assignee: SAMSUNG ELECTRONICS CO., LTD.
- Current Assignee: SAMSUNG ELECTRONICS CO., LTD.
- Current Assignee Address: KR Gyeonggi-Do
- Agency: Harness, Dickey & Pierce, PLC
- Priority: KR10-2014-0153738 20141106
- Main IPC: H01L21/02
- IPC: H01L21/02 ; H01L21/48 ; H01L27/105 ; H01L27/02

Abstract:
A method of manufacturing a vertical memory device includes: providing a substrate including a cell array region and a peripheral circuit region; forming a mold structure in the cell array region; forming a mold protection film in a portion of the cell array region and the peripheral circuit region, the mold protection film contacting the mold structure; forming an opening for a common source line that passes through the mold structure and extends in a first direction perpendicular to a top surface of the substrate; forming a peripheral circuit contact hole that passes through the mold protection film and extends in the first direction in the peripheral circuit region; and simultaneously forming a first contact plug and a second contact plug, respectively, in the opening for the common source line and in the peripheral circuit contact hole.
Public/Granted literature
- US20160133630A1 VERTICAL MEMORY DEVICES AND METHODS OF MANUFACTURING THE SAME Public/Granted day:2016-05-12
Information query
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