Invention Grant
US09543310B2 Semiconductor storage device having communicated air gaps between adjacent memory cells
有权
半导体存储装置在相邻的存储单元之间传送空气间隙
- Patent Title: Semiconductor storage device having communicated air gaps between adjacent memory cells
- Patent Title (中): 半导体存储装置在相邻的存储单元之间传送空气间隙
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Application No.: US14574549Application Date: 2014-12-18
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Publication No.: US09543310B2Publication Date: 2017-01-10
- Inventor: Satoshi Nagashima , Takehiro Kondoh
- Applicant: KABUSHIKI KAISHA TOSHIBA
- Applicant Address: JP Minato-ku
- Assignee: KABUSHIKI KAISHA TOSHIBA
- Current Assignee: KABUSHIKI KAISHA TOSHIBA
- Current Assignee Address: JP Minato-ku
- Agency: Oblon, McClelland, Maier & Neustadt, L.L.P.
- Main IPC: H01L27/115
- IPC: H01L27/115 ; H01L29/06 ; H01L21/764
Abstract:
A semiconductor storage device according to an embodiment of the invention includes a semiconductor substrate and a plurality of memory cells on the semiconductor substrate. A first film is provided above the memory cells to form air gaps above a memory string in which the memory cells are connected in series.
Public/Granted literature
- US20160071856A1 SEMICONDUCTOR STORAGE DEVICE AND MANUFACTURING METHOD THEREOF Public/Granted day:2016-03-10
Information query
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