Invention Grant
- Patent Title: Semiconductor device and method of manufacturing the same
- Patent Title (中): 半导体装置及其制造方法
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Application No.: US14712629Application Date: 2015-05-14
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Publication No.: US09543317B2Publication Date: 2017-01-10
- Inventor: Tae Kyung Kim
- Applicant: SK hynix Inc.
- Applicant Address: KR Gyeonggi-do
- Assignee: SK Hynix Inc.
- Current Assignee: SK Hynix Inc.
- Current Assignee Address: KR Gyeonggi-do
- Agency: IP & T Group LLP
- Priority: KR10-2014-0179781 20141212
- Main IPC: H01L27/115
- IPC: H01L27/115 ; H01L29/10
Abstract:
A semiconductor device includes interlayer insulating films spaced apart from each other and stacked over each other, and wherein first ends of the interlayer insulating films form a stepped structure; a slit penetrating the interlayer insulating films and dividing the interlayer insulating films into a plurality of stack structures; line patterns arranged between adjacent interlayer insulating films and separated from each other by the slit; pad patterns connected to the line patterns, formed over the first ends of the interlayer insulating films, and separated from each other by the slit; and at least one punch prevention pattern formed over sidewalls of the pad patterns adjacent to the slit and formed over the first ends of the interlayer insulating films.
Public/Granted literature
- US20160172371A1 SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME Public/Granted day:2016-06-16
Information query
IPC分类:
