Invention Grant
US09543327B2 Semiconductor device having insulation layer with concave portion and semiconductor layer that includes channel area disposed at concave portion, electro-optical device, method of manufacturing semiconductor device, method of manufacturing electro-optical device, and electronic apparatus
有权
具有凹部绝缘层的半导体装置和设置在凹部的沟道区域的半导体层，电光装置，半导体装置的制造方法，电光装置的制造方法以及电子装置
- Patent Title: Semiconductor device having insulation layer with concave portion and semiconductor layer that includes channel area disposed at concave portion, electro-optical device, method of manufacturing semiconductor device, method of manufacturing electro-optical device, and electronic apparatus
- Patent Title (中): 具有凹部绝缘层的半导体装置和设置在凹部的沟道区域的半导体层，电光装置，半导体装置的制造方法，电光装置的制造方法以及电子装置
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Application No.: US15046156Application Date: 2016-02-17
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Publication No.: US09543327B2Publication Date: 2017-01-10
- Inventor: Masashi Nakagawa
- Applicant: Seiko Epson Corporation
- Applicant Address: JP Tokyo
- Assignee: Seiko Epson Corporation
- Current Assignee: Seiko Epson Corporation
- Current Assignee Address: JP Tokyo
- Agency: ALG Intellectual Property, LLC
- Priority: JP2013-087211 20130418
- Main IPC: H01L27/12
- IPC: H01L27/12 ; H01L29/786 ; H01L29/423 ; G02F1/1333 ; G02F1/1362 ; G02F1/1368
Abstract:
A first insulation layer includes a concave portion. A semiconductor layer includes a source area and a drain area, and a channel area disposed at the concave portion of the first insulation layer. A gate insulation layer covers the channel area. A gate electrode is disposed to be opposed to the channel area via the gate insulation layer. A first electrode is one of a source electrode and a drain electrode. A second electrode is the other of the source electrode and the drain electrode.
Public/Granted literature
Information query
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