Invention Grant
- Patent Title: Thin film transistor substrate and method for manufacturing the same
- Patent Title (中): 薄膜晶体管基板及其制造方法
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Application No.: US14755984Application Date: 2015-06-30
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Publication No.: US09543329B2Publication Date: 2017-01-10
- Inventor: Kazunori Inoue , Koji Oda , Naoki Tsumura
- Applicant: Mitsubishi Electric Corporation
- Applicant Address: JP Tokyo
- Assignee: Mitsubishi Electric Corporation
- Current Assignee: Mitsubishi Electric Corporation
- Current Assignee Address: JP Tokyo
- Agency: Studebaker & Brackett PC
- Priority: JP2014-139677 20140707
- Main IPC: H01L21/02
- IPC: H01L21/02 ; H01L27/12 ; H01L29/24 ; H01L29/786 ; H01L29/66 ; H01L21/441 ; G02F1/1368 ; G02F1/1343 ; G02F1/1362

Abstract:
A thin film transistor substrate includes: a gate insulating film that covers a gate electrode and a common electrode; a transparent oxide film selectively disposed on the gate insulating film; a source electrode and a drain electrode that are spaced from each other on the transparent oxide film; and a light transmissive pixel electrode electrically connected to the drain electrode. The transparent oxide film includes a conductive region and a semiconductor region. The conductive region is disposed in a lower portion of the source electrode and the drain electrode and disposed in a portion that continues from the lower portion of the drain electrode, extends to part of an upper portion of the common electrode, and forms the pixel electrode. The semiconductor region is disposed in a portion corresponding to a lower layer in a region between the source electrode and the drain electrode.
Public/Granted literature
- US20160005770A1 THIN FILM TRANSISTOR SUBSTRATE AND METHOD FOR MANUFACTURING THE SAME Public/Granted day:2016-01-07
Information query
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