Invention Grant
- Patent Title: Photoelectric conversion device and method of manufacturing photoelectric conversion device
- Patent Title (中): 光电转换装置及制造光电转换装置的方法
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Application No.: US15017745Application Date: 2016-02-08
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Publication No.: US09543340B2Publication Date: 2017-01-10
- Inventor: Junji Iwata
- Applicant: CANON KABUSHIKI KAISHA
- Applicant Address: JP Tokyo
- Assignee: CANON KABUSHIKI KAISHA
- Current Assignee: CANON KABUSHIKI KAISHA
- Current Assignee Address: JP Tokyo
- Agency: Fitzpatrick, Cella, Harper & Scinto
- Priority: JP2015-031380 20150220
- Main IPC: H01L21/8238
- IPC: H01L21/8238 ; H01L27/146

Abstract:
A photoelectric conversion device includes a pixel including a transfer transistor transferring signal charges generated in a photoelectric conversion portion from a charge accumulation region to a floating diffusion region, and a peripheral transistor forming a peripheral circuit for controlling a read-out operation of a pixel signal based on the signal charges from the pixel. A gate electrode of the transfer transistor and the floating diffusion region are separated from each other by a first distance in a plan view. A gate electrode and a drain region of the peripheral transistor are separated from each other by a second distance smaller than the first distance in a plan view.
Public/Granted literature
- US20160247843A1 PHOTOELECTRIC CONVERSION DEVICE AND METHOD OF MANUFACTURING PHOTOELECTRIC CONVERSION DEVICE Public/Granted day:2016-08-25
Information query
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