This technology provides an electronic device and a method of fabricating the same. An electronic device in accordance with an implementation of this document includes a transistor comprising a gate where at least a portion of the gate is filled in a semiconductor substrate including an active region defined by an isolation layer; a junction which is disposed over the active region at both side of the gate and includes a metal-containing layer and a first semiconductor layer doped with an impurity and interposed between the active region and the metal-containing layer; and a material layer which is interposed between the junction and the active region to prevent diffusion of the impurity from the first semiconductor layer and defines an opening for coupling the junction to the active region.