Invention Grant
- Patent Title: Protective layer(s) in organic image sensors
- Patent Title (中): 有机图像传感器中的保护层
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Application No.: US14929795Application Date: 2015-11-02
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Publication No.: US09543362B2Publication Date: 2017-01-10
- Inventor: Chin-Wei Liang , Cheng-Yuan Tsai , Chia-Shiung Tsai
- Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
- Applicant Address: TW Hsin-Chu
- Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
- Current Assignee Address: TW Hsin-Chu
- Agency: Eschweiler & Associates, LLC
- Main IPC: H01L29/08
- IPC: H01L29/08 ; H01L31/00 ; H01L27/30 ; H01L51/44 ; H01L51/00 ; H01L27/32

Abstract:
The present disclosure relates to an organic image sensor and an associated method. By inserting an inorganic protective layer between an electrode and an organic photo active region of the image sensor, the organic photo active region is protected from moisture, oxygen or following process damage. The inorganic protective layers also help to suppress the leakage in the dark. In some embodiments, the organic image sensor comprises a first electrode, an organic photoelectrical conversion structure disposed over the first electrode and a second electrode disposed over the organic photoelectrical conversion structure. The organic image sensor further comprises a first protective structure covering a top surface and a sidewall of the organic photoelectrical conversion structure.
Public/Granted literature
- US20160056212A1 PROTECTIVE LAYER(S) IN ORGANIC IMAGE SENSORS Public/Granted day:2016-02-25
Information query
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