Invention Grant
US09543375B2 MIM/RRAM structure with improved capacitance and reduced leakage current
有权
MIM / RRAM结构具有改进的电容和减小的漏电流
- Patent Title: MIM/RRAM structure with improved capacitance and reduced leakage current
- Patent Title (中): MIM / RRAM结构具有改进的电容和减小的漏电流
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Application No.: US14316910Application Date: 2014-06-27
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Publication No.: US09543375B2Publication Date: 2017-01-10
- Inventor: Jian-Shiou Huang , Yao-Wen Chang , Hsing-Lien Lin , Cheng-Yuan Tsai , Chia-Shiung Tsai
- Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
- Applicant Address: TW Hsin-Chu
- Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
- Current Assignee Address: TW Hsin-Chu
- Agency: Eschweiler & Associates, LLC
- Main IPC: H01L49/02
- IPC: H01L49/02 ; H01L21/02

Abstract:
Some embodiments of the present disclosure provide an integrated circuit (IC) device including a metal-insulator-metal (MIM) capacitor structure. The MIM capacitor structure includes a lower metal capacitor electrode, an upper metal capacitor electrode, and a capacitor dielectric separating the lower metal capacitor electrode from the upper metal capacitor electrode. The capacitor dielectric is made up of an amorphous oxide/nitride matrix and a plurality of metal or metal oxide/nitride nano-particles that are randomly distributed over the volume of amorphous oxide/nitride matrix.
Public/Granted literature
- US20150380477A1 MIM/RRAM Structure with Improved Capacitance and Reduced Leakage Current Public/Granted day:2015-12-31
Information query
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