Invention Grant
US09543375B2 MIM/RRAM structure with improved capacitance and reduced leakage current 有权
MIM / RRAM结构具有改进的电容和减小的漏电流

MIM/RRAM structure with improved capacitance and reduced leakage current
Abstract:
Some embodiments of the present disclosure provide an integrated circuit (IC) device including a metal-insulator-metal (MIM) capacitor structure. The MIM capacitor structure includes a lower metal capacitor electrode, an upper metal capacitor electrode, and a capacitor dielectric separating the lower metal capacitor electrode from the upper metal capacitor electrode. The capacitor dielectric is made up of an amorphous oxide/nitride matrix and a plurality of metal or metal oxide/nitride nano-particles that are randomly distributed over the volume of amorphous oxide/nitride matrix.
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