Invention Grant
US09543386B2 Semiconductor device with field electrode structures, gate structures and auxiliary diode structures
有权
具有场电极结构,栅极结构和辅助二极管结构的半导体器件
- Patent Title: Semiconductor device with field electrode structures, gate structures and auxiliary diode structures
- Patent Title (中): 具有场电极结构,栅极结构和辅助二极管结构的半导体器件
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Application No.: US14849106Application Date: 2015-09-09
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Publication No.: US09543386B2Publication Date: 2017-01-10
- Inventor: Ralf Siemieniec , Oliver Blank , Franz Hirler , Martin Henning Vielemeyer
- Applicant: Infineon Technologies Austria AG
- Applicant Address: AT Villach
- Assignee: Infineon Technologies Austria AG
- Current Assignee: Infineon Technologies Austria AG
- Current Assignee Address: AT Villach
- Agency: Murphy, Bilak & Homiller, PLLC
- Priority: DE102014113189 20140912
- Main IPC: H01L29/66
- IPC: H01L29/66 ; H01L29/06 ; H01L29/739 ; H01L29/40 ; H01L29/10 ; H01L29/78 ; H01L29/861 ; H01L29/872

Abstract:
A semiconductor device includes field electrode structures extending in a direction vertical to a first surface in a semiconductor body. Cell mesas are formed from portions of the semiconductor body between the field electrode structures and include body zones that form first pn junctions with a drift zone. Gate structures between the field electrode structures control a current flow through the body zones. Auxiliary diode structures with a forward voltage lower than the first pn junctions are electrically connected in parallel with the first pn junctions, wherein semiconducting portions of the auxiliary diode structures are formed in the cell mesas.
Public/Granted literature
- US20160079238A1 Semiconductor Device with Field Electrode Structures, Gate Structures and Auxiliary Diode Structures Public/Granted day:2016-03-17
Information query
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