Invention Grant
US09543411B2 Lateral double diffusion metal-oxide-semiconductor (LDMOS) transistors and fabrication method thereof
有权
横向双扩散金属氧化物半导体（LDMOS）晶体管及其制造方法
- Patent Title: Lateral double diffusion metal-oxide-semiconductor (LDMOS) transistors and fabrication method thereof
- Patent Title (中): 横向双扩散金属氧化物半导体（LDMOS）晶体管及其制造方法
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Application No.: US14061179Application Date: 2013-10-23
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Publication No.: US09543411B2Publication Date: 2017-01-10
- Inventor: Jian Xiang Cai , Juilin Lu , Ty Chiu
- Applicant: Semiconductor Manufacturing International (Shanghai) Corporation
- Applicant Address: CN Shanghai
- Assignee: SEMICONDUCTOR MANUFACTURING INTERNATIONAL (SHANGHAI) CORPORATION
- Current Assignee: SEMICONDUCTOR MANUFACTURING INTERNATIONAL (SHANGHAI) CORPORATION
- Current Assignee Address: CN Shanghai
- Agency: Anova Law Group, PLLC
- Priority: CN201310231955 20130609
- Main IPC: H01L29/66
- IPC: H01L29/66 ; H01L21/336 ; H01L29/78 ; H01L29/06
Abstract:
A lateral double diffusion metal-oxide-semiconductor (LDMOS) transistor is provided. The LDMOS transistor includes a semiconductor substrate having a well region and a drain region in the well region. The LDMOS transistor also includes at least one drifting region in the well region and an annular source region in the drifting region surrounding the drain region. Further, the LDMOS transistor includes at least one annular isolation structure surrounding the drain region in the drifting region. Further, the LDMOS transistor also includes an annular gate dielectric layer on the well region and an annular gate on the annular gate dielectric layer.
Public/Granted literature
- US20140361366A1 LATERAL DOUBLE DIFFUSION METAL-OXIDE-SEMICONDUCTOR (LDMOS) TRANSISTORS AND FABRICATION METHOD THEREOF Public/Granted day:2014-12-11
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