Invention Grant
US09543434B2 Device active channel length/width greater than channel length/width
有权
设备活动通道长度/宽度大于通道长度/宽度
- Patent Title: Device active channel length/width greater than channel length/width
- Patent Title (中): 设备活动通道长度/宽度大于通道长度/宽度
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Application No.: US14112627Application Date: 2011-05-19
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Publication No.: US09543434B2Publication Date: 2017-01-10
- Inventor: Trudy Benjamín
- Applicant: Trudy Benjamín
- Applicant Address: US TX Houston
- Assignee: HEWLETT-PACKARD DEVELOPMENT COMPANY, L.P.
- Current Assignee: HEWLETT-PACKARD DEVELOPMENT COMPANY, L.P.
- Current Assignee Address: US TX Houston
- Agency: Dicke, Billig & Czaja PLLC
- International Application: PCT/US2011/037202 WO 20110519
- International Announcement: WO2012/158174 WO 20121122
- Main IPC: H01L29/78
- IPC: H01L29/78 ; H01L21/8234 ; H01L27/088 ; H01L29/66
Abstract:
A device including a drain, a channel, and a gate. The channel surrounds the drain and has a channel length to width ratio. The gate is situated over the channel to provide an active channel region that has an active channel region length to width ratio that is greater than the channel length to width ratio.
Public/Granted literature
- US20140042505A1 DEVICE ACTIVE CHANNEL LENGTH/WIDTH GREATER THAN CHANNEL LENGTH/WIDTH Public/Granted day:2014-02-13
Information query
IPC分类:
