Invention Grant
US09543442B2 Manufacture method of dual gate oxide semiconductor TFT substrate and structure thereof
有权
双栅氧化半导体TFT基板的制造方法及其结构
- Patent Title: Manufacture method of dual gate oxide semiconductor TFT substrate and structure thereof
- Patent Title (中): 双栅氧化半导体TFT基板的制造方法及其结构
-
Application No.: US14763823Application Date: 2015-05-21
-
Publication No.: US09543442B2Publication Date: 2017-01-10
- Inventor: Shimin Ge , Hejing Zhang , Chihyuan Tseng , Chihyu Su , Wenhui Li , Longqiang Shi , Xiaowen Lv
- Applicant: Shenzhen China Star Optoelectronics Technology Co., Ltd.
- Applicant Address: CN Shenzhen, Guangdong
- Assignee: SHENZHEN CHINA STAR OPTOELECTRONICS TECHNOLOGY CO., LTD.
- Current Assignee: SHENZHEN CHINA STAR OPTOELECTRONICS TECHNOLOGY CO., LTD.
- Current Assignee Address: CN Shenzhen, Guangdong
- Agent Leong C. Lei
- Priority: CN201510175653 20150414
- International Application: PCT/CN2015/079477 WO 20150521
- International Announcement: WO2016/165187 WO 20161020
- Main IPC: H01L21/00
- IPC: H01L21/00 ; H01L29/786 ; H01L27/12 ; H01L29/24 ; H01L29/49 ; G02F1/1343 ; G02F1/1368 ; G02F1/1333

Abstract:
The present invention provides a manufacture method of an oxide semiconductor TFT substrate and a structure thereof. The manufacture method of the dual gate oxide semiconductor TFT substrate utilizes the halftone mask to implement one photo process, which cannot only accomplish the patterning to the oxide semiconductor layer but also obtain the oxide conductor layer (52′) with ion doping process, and the oxide conductor layer (52′) is employed as being the pixel electrode of the LCD to replace the ITO pixel electrode in prior art; the method manufactures the source (81), the drain (82) and the top gate (71) at the same time with one photo process; the method implements patterning process to the passivation layer (8) and the top gate isolation layer (32) together with one photo process, to reduce the number of the photo processes to five for shortening the manufacture procedure, raising the production efficiency and lowering the production cost.
Public/Granted literature
- US20160308066A1 MANUFACTURE METHOD OF DUAL GATE OXIDE SEMICONDUCTOR TFT SUBSTRATE AND STRUCTURE THEREOF Public/Granted day:2016-10-20
Information query
IPC分类: