Invention Grant
- Patent Title: High bandgap III-V alloys for high efficiency optoelectronics
- Patent Title (中): 高带隙III-V合金用于高效光电子学
-
Application No.: US13878738Application Date: 2011-10-12
-
Publication No.: US09543468B2Publication Date: 2017-01-10
- Inventor: Kirstin Alberi , Angelo Mascarenhas , Mark Wanlass
- Applicant: Kirstin Alberi , Angelo Mascarenhas , Mark Wanlass
- Applicant Address: US CO Golden
- Assignee: Alliance for Sustainable Energy, LLC
- Current Assignee: Alliance for Sustainable Energy, LLC
- Current Assignee Address: US CO Golden
- Agent Michael A. McIntyre
- International Application: PCT/US2011/055994 WO 20111012
- International Announcement: WO2012/051324 WO 20120419
- Main IPC: H01L33/04
- IPC: H01L33/04 ; H01L33/00 ; H01L33/12 ; H01L33/30 ; H01L33/32 ; B82Y20/00
Abstract:
High bandgap alloys for high efficiency optoelectronics are disclosed. An exemplary optoelectronic device may include a substrate, at least one Al1-xInxP layer, and a step-grade buffer between the substrate and at least one Al1-xInxP layer. The buffer may begin with a layer that is substantially lattice matched to GaAs, and may then incrementally increase the lattice constant in each sequential layer until a predetermined lattice constant of Al1-xInxP is reached.
Public/Granted literature
- US20130221326A1 High Bandgap III-V Alloys for High Efficiency Optoelectronics Public/Granted day:2013-08-29
Information query
IPC分类:
