Invention Grant
- Patent Title: Semiconductor light emitting device
- Patent Title (中): 半导体发光器件
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Application No.: US14452309Application Date: 2014-08-05
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Publication No.: US09543470B2Publication Date: 2017-01-10
- Inventor: Kyung Wook Hwang , Jae Hyeok Heo , Joong Kon Son
- Applicant: SAMSUNG ELECTRONICS CO., LTD.
- Applicant Address: KR Suwon-si, Gyeonggi-Do
- Assignee: SAMSUNG ELECTRONICS CO., LTD.
- Current Assignee: SAMSUNG ELECTRONICS CO., LTD.
- Current Assignee Address: KR Suwon-si, Gyeonggi-Do
- Agency: F. Chau & Associates, LLC
- Priority: KR10-2013-0092956 20130806
- Main IPC: H01L33/10
- IPC: H01L33/10 ; H01L33/24

Abstract:
A semiconductor light emitting device includes a substrate, a reflective layer and a light emitting structure. The reflective layer includes at least two porous layers alternately disposed on the substrate and having different porosities. The light emitting structure is disposed on the reflective layer and includes a first conductivity-type semiconductor layer, an active layer and a second conductivity-type semiconductor layer.
Public/Granted literature
- US20150041822A1 SEMICONDUCTOR LIGHT EMITTING DEVICE Public/Granted day:2015-02-12
Information query
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