Invention Grant
US09543470B2 Semiconductor light emitting device 有权
半导体发光器件

Semiconductor light emitting device
Abstract:
A semiconductor light emitting device includes a substrate, a reflective layer and a light emitting structure. The reflective layer includes at least two porous layers alternately disposed on the substrate and having different porosities. The light emitting structure is disposed on the reflective layer and includes a first conductivity-type semiconductor layer, an active layer and a second conductivity-type semiconductor layer.
Public/Granted literature
Information query
Patent Agency Ranking
0/0