Invention Grant
- Patent Title: Diode-based devices and methods for making the same
- Patent Title (中): 基于二极管的器件及其制造方法
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Application No.: US14983138Application Date: 2015-12-29
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Publication No.: US09543472B2Publication Date: 2017-01-10
- Inventor: Anthony J. Lochtefeld
- Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.
- Applicant Address: TW Hsin-Chu
- Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee Address: TW Hsin-Chu
- Agency: Slater Matsil, LLP
- Main IPC: H01L33/18
- IPC: H01L33/18 ; H01L31/18 ; H01L33/24 ; H01L29/66 ; H01L31/0352 ; H01L31/036 ; H01L33/00 ; H01L33/06 ; H01L21/02 ; H01L29/04 ; H01L29/88 ; H01L33/08
Abstract:
In accordance with an embodiment, a diode comprises a substrate, a dielectric material including an opening that exposes a portion of the substrate, the opening having an aspect ratio of at least 1, a bottom diode material including a lower region disposed at least partly in the opening and an upper region extending above the opening, the bottom diode material comprising a semiconductor material that is lattice mismatched to the substrate, a top diode material proximate the upper region of the bottom diode material, and an active diode region between the top and bottom diode materials, the active diode region including a surface extending away from the top surface of the substrate.
Public/Granted literature
- US20160133787A1 Diode-Based Devices and Methods for Making the Same Public/Granted day:2016-05-12
Information query
IPC分类:
