Invention Grant
- Patent Title: Ferroelectric thin film having superlattice structure, manufacturing method thereof, ferroelectric element, and manufacturing method thereof
- Patent Title (中): 具有超晶格结构的铁电薄膜及其制造方法,铁电元件及其制造方法
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Application No.: US13878571Application Date: 2011-10-04
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Publication No.: US09543500B2Publication Date: 2017-01-10
- Inventor: Minoru Osada , Takayoshi Sasaki
- Applicant: Minoru Osada , Takayoshi Sasaki
- Applicant Address: JP Ibaraki
- Assignee: NATIONAL INSTITUTE FOR MATERIALS SCIENCE
- Current Assignee: NATIONAL INSTITUTE FOR MATERIALS SCIENCE
- Current Assignee Address: JP Ibaraki
- Agency: Wenderoth, Lind & Ponack, L.L.P.
- Priority: JP2010-230132 20101013
- International Application: PCT/JP2011/072844 WO 20111004
- International Announcement: WO2012/050007 WO 20120419
- Main IPC: B32B7/02
- IPC: B32B7/02 ; B32B27/32 ; H01L29/04 ; H01L41/18 ; G11C11/22 ; H01L21/02 ; H01L27/115 ; C30B19/06 ; H01G4/12 ; H01L41/187 ; H01G4/33 ; H01L41/317 ; H01L49/02

Abstract:
At least two types of dielectric materials such as oxide nanosheets having a layered perovskite structure that differ from each other are laminated, and the nanosheets are bonded to each other via an ionic material, thereby producing a superlattice structure-having ferroelectric thin film. Having the layered structure, the film can exhibit ferroelectricity as a whole, though not using a ferroelectric material therein. Accordingly, there is provided a ferroelectric film based on a novel principle, which is favorable for ferroelectric memories and others and which is free from a size effect even though extremely thinned.
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