Invention Grant
- Patent Title: Magnetic memory device and method for manufacturing the same
- Patent Title (中): 磁记忆装置及其制造方法
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Application No.: US14729710Application Date: 2015-06-03
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Publication No.: US09543505B2Publication Date: 2017-01-10
- Inventor: Sang Hwan Park , Kwangseok Kim , Keewon Kim , Jae Hoon Kim , Joonmyoung Lee
- Applicant: Sang Hwan Park , Kwangseok Kim , Keewon Kim , Jae Hoon Kim , Joonmyoung Lee
- Applicant Address: KR Gyeonggi-do
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR Gyeonggi-do
- Agency: Harness, Dickey & Pierce, P.L.C.
- Priority: KR10-2014-0121124 20140912
- Main IPC: H01L43/08
- IPC: H01L43/08 ; H01L43/10 ; H01L43/12 ; H01L29/82 ; H01L27/22
Abstract:
A memory device includes a magnetic tunnel junction comprising a first free layer, a pinned layer, and a tunnel barrier layer disposed between the first free layer and the pinned layer, wherein the first free layer comprises a first free magnetic pattern adjacent to the tunnel barrier layer, and a second free magnetic pattern spaced apart from the tunnel barrier layer with the first free magnetic pattern interposed therebetween, wherein the second free magnetic pattern contacts the first free magnetic pattern, wherein the first and second free magnetic patterns include boron (B), wherein a boron content of the first free magnetic pattern is higher than a boron content of the second free magnetic pattern, and wherein the boron content of the first free magnetic pattern is in a range of about 25 at % to about 50 at %.
Public/Granted literature
- US20160079520A1 MAGNETIC MEMORY DEVICE AND METHOD FOR MANUFACTURING THE SAME Public/Granted day:2016-03-17
Information query
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