Invention Grant
- Patent Title: Magnetic random access memory with tri-layer reference layer
- Patent Title (中): 具有三层参考层的磁性随机存取存储器
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Application No.: US15054561Application Date: 2016-02-26
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Publication No.: US09543506B2Publication Date: 2017-01-10
- Inventor: Huadong Gan , Yiming Huai , Yuchen Zhou , Zihui Wang , Xiaobin Wang , Bing K. Yen , Xiaojie Hao
- Applicant: Avalanche Technology, Inc.
- Applicant Address: US CA Fremont
- Assignee: Avalanche Technology, Inc.
- Current Assignee: Avalanche Technology, Inc.
- Current Assignee Address: US CA Fremont
- Agent Bing K. Yen
- Main IPC: H01L29/82
- IPC: H01L29/82 ; H01L43/02 ; H01L43/08 ; H01F10/32 ; G11C11/16 ; H01F41/30 ; H01L29/66 ; H01L43/10 ; H01L27/22 ; B82Y40/00
Abstract:
The present invention is directed to an MTJ memory element including a magnetic free layer structure which comprises one or more magnetic free layers that have a same variable magnetization direction substantially perpendicular to layer planes thereof; an insulating tunnel junction layer formed adjacent to the magnetic free layer structure; a magnetic reference layer structure comprising a first magnetic reference layer formed adjacent to the insulating tunnel junction layer and a second magnetic reference layer separated therefrom by a perpendicular enhancement layer with the first and second magnetic reference layers having a first fixed magnetization direction substantially perpendicular to layer planes thereof; an anti-ferromagnetic coupling layer formed adjacent to the second magnetic reference layer opposite the perpendicular enhancement layer; and a magnetic fixed layer comprising first and second magnetic fixed sublayers with the second magnetic fixed sublayer formed adjacent to the anti-ferromagnetic coupling layer opposite the second magnetic reference layer.
Public/Granted literature
- US20160204341A1 MAGNETIC RANDOM ACCESS MEMORY WITH PERPENDICULAR ENHANCEMENT LAYER Public/Granted day:2016-07-14
Information query
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