Invention Grant
- Patent Title: Magnetic memory element and storage device using the same
- Patent Title (中): 磁存储元件及使用其的存储装置
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Application No.: US14250461Application Date: 2014-04-11
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Publication No.: US09543508B2Publication Date: 2017-01-10
- Inventor: Michiya Yamada , Yasushi Ogimoto
- Applicant: III Holdings 3, LLC
- Applicant Address: US DE Wilmington
- Assignee: III HOLDINGS 3, LLC
- Current Assignee: III HOLDINGS 3, LLC
- Current Assignee Address: US DE Wilmington
- Agency: McAndrews, Held & Malloy, Ltd.
- Priority: JP2008-226446 20080903
- Main IPC: H01L21/02
- IPC: H01L21/02 ; H01L43/10 ; H01L43/08 ; H01L27/22
Abstract:
A magnetic miniaturized memory element with improved thermal stability of magnetization includes a first magnetic layer, an insulating layer that is formed on the first magnetic layer, a second magnetic layer that is formed on the insulating layer, and an expanded interlayer insulating film that comes into contact with side surfaces of the first and second magnetic layers, where at least one of the first magnetic layer and the second magnetic layer is strained and deformed so as to be elongated in an easy magnetization axis direction of the first magnetic layer or the second magnetic layer or compressive strain remains in any direction in the plane of at least one of the first magnetic layer and the second magnetic layer.
Public/Granted literature
- US20140217534A1 MAGNETIC MEMORY ELEMENT AND STORAGE DEVICE USING THE SAME Public/Granted day:2014-08-07
Information query
IPC分类:
