Invention Grant
- Patent Title: Magnatoresistive structure and method for forming the same
- Patent Title (中): 磁阻结构及其形成方法
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Application No.: US14059561Application Date: 2013-10-22
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Publication No.: US09543509B2Publication Date: 2017-01-10
- Inventor: Fu-Tai Liou , Chien-Min Lee , Nai-Chung Fu
- Applicant: Voltafield Technology Corp.
- Applicant Address: TW Zhubei
- Assignee: Voltafield Technology Corp.
- Current Assignee: Voltafield Technology Corp.
- Current Assignee Address: TW Zhubei
- Agency: Kamrath IP Lawfirm, P.A.
- Agent Alan D. Kamrath
- Priority: TW102116605A 20130510
- Main IPC: H01L43/12
- IPC: H01L43/12 ; G01R33/09 ; H01L43/08

Abstract:
A magnetoresistive structure includes a substrate and a patterned stack structure. The substrate has a back surface and a front surface having a step portion. The patterned stack structure is on the step portion of the front surface and comprises a magnetoresistive layer, a conductive cap layer and a dielectric hard mask layer. The step portion has a top surface parallel to the back surface, a bottom surface parallel to the back surface and a step height joining the top surface and bottom surface and being not parallel to the back surface.
Public/Granted literature
- US20140332914A1 Magnatoresistive Structure and Method for Forming the Same Public/Granted day:2014-11-13
Information query
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