Invention Grant
US09543509B2 Magnatoresistive structure and method for forming the same 有权
磁阻结构及其形成方法

Magnatoresistive structure and method for forming the same
Abstract:
A magnetoresistive structure includes a substrate and a patterned stack structure. The substrate has a back surface and a front surface having a step portion. The patterned stack structure is on the step portion of the front surface and comprises a magnetoresistive layer, a conductive cap layer and a dielectric hard mask layer. The step portion has a top surface parallel to the back surface, a bottom surface parallel to the back surface and a step height joining the top surface and bottom surface and being not parallel to the back surface.
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