Invention Grant
- Patent Title: RRAM device
- Patent Title (中): RRAM设备
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Application No.: US14645878Application Date: 2015-03-12
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Publication No.: US09543511B2Publication Date: 2017-01-10
- Inventor: Fu-Ting Sung , Chang-Ming Wu , Hsia-Wei Chen , Shih-Chang Liu , Wen-Ting Chu , Yu-Wen Liao
- Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
- Applicant Address: TW Hsin-Chu
- Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
- Current Assignee Address: TW Hsin-Chu
- Agency: Eschweiler & Associates, LLC
- Main IPC: H01L45/00
- IPC: H01L45/00 ; H01L27/24

Abstract:
The present disclosure relates to an integrated circuits device having a RRAM cell, and an associated method of formation. In some embodiments, the integrated circuit device has a lower metal interconnect layer surrounded by a lower ILD layer and a bottom electrode disposed over the lower metal interconnect layer. The bottom electrode has a lower portion surrounded by a bottom dielectric layer and an upper portion wider than the lower portion. The bottom dielectric layer is disposed over the lower metal interconnect layer and the lower ILD layer. The integrated circuit device also has a RRAM dielectric with a variable resistance located on the bottom electrode, and a top electrode located over the RRAM dielectric. The integrated circuit device also has a top dielectric layer located over the bottom dielectric layer abutting sidewalls of the upper portion of the bottom electrode, the RRAM dielectric, and the top electrode.
Public/Granted literature
- US20160268505A1 RRAM DEVICE Public/Granted day:2016-09-15
Information query
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