Invention Grant
- Patent Title: Variable resistance material layers and variable resistance memory devices including the same
- Patent Title (中): 可变电阻材料层和包括其的可变电阻存储器件
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Application No.: US14965616Application Date: 2015-12-10
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Publication No.: US09543513B2Publication Date: 2017-01-10
- Inventor: Do-Hyung Kim , Jong-Uk Kim , Dong-Ho Ahn , Sung-Lae Cho
- Applicant: Do-Hyung Kim , Jong-Uk Kim , Dong-Ho Ahn , Sung-Lae Cho
- Applicant Address: KR
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR
- Agency: Myers Bigel, P.A.
- Priority: KR10-2014-0186754 20141223
- Main IPC: H01L45/00
- IPC: H01L45/00 ; H01L27/24
Abstract:
A variable resistance material layer including germanium (Ge), antimony (Sb), tellurium (Te), and at least one type of impurities X. The variable resistance material layer having a composition represented by a chemical formula of Xp(GeaSb(1-a-b)Teb)(1-p), wherein an atomic concentration of the impurities X is in a range of 0
Public/Granted literature
- US20160181521A1 VARIABLE RESISTANCE MATERIAL LAYERS AND VARIABLE RESISTANCE MEMORY DEVICES INCLUDING THE SAME Public/Granted day:2016-06-23
Information query
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