Invention Grant
US09543514B2 Memory component, memory device, and method of operating memory device
有权
存储器组件，存储器件和操作存储器件的方法
- Patent Title: Memory component, memory device, and method of operating memory device
- Patent Title (中): 存储器组件，存储器件和操作存储器件的方法
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Application No.: US14950512Application Date: 2015-11-24
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Publication No.: US09543514B2Publication Date: 2017-01-10
- Inventor: Kazuhiro Ohba , Shuichiro Yasuda , Tetsuya Mizuguchi , Katsuhisa Aratani , Masayuki Shimuta , Akira Kouchiyama , Mayumi Ogasawara
- Applicant: Sony Corporation
- Applicant Address: JP Tokyo
- Assignee: SONY SEMICONDUCTOR SOLUTIONS CORPORATION
- Current Assignee: SONY SEMICONDUCTOR SOLUTIONS CORPORATION
- Current Assignee Address: JP Tokyo
- Agency: Dentons US LLP
- Priority: JP2010-026573 20100209; JP2010-261517 20101124
- Main IPC: G11C11/16
- IPC: G11C11/16 ; H01L45/00 ; G11C13/00 ; H01L27/24
Abstract:
A memory component including first and second electrodes with a memory layer therebetween, the memory layer having first and second memory layers, the first memory layer containing aluminum and a chalcogen element of tellurium, the second memory layer between the first memory layer and the first electrode and containing an aluminum oxide and at least one of a transition metal oxide and a transition metal oxynitride having a lower resistance than the aluminum oxide.
Public/Granted literature
- US20160079528A1 MEMORY COMPONENT, MEMORY DEVICE, AND METHOD OF OPERATING MEMORY DEVICE Public/Granted day:2016-03-17
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