Invention Grant
- Patent Title: ESD protection circuits and methods
- Patent Title (中): ESD保护电路和方法
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Application No.: US14445138Application Date: 2014-07-29
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Publication No.: US09543757B2Publication Date: 2017-01-10
- Inventor: Ming-Hsien Tsai
- Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
- Applicant Address: TW Hsin-Chu
- Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
- Current Assignee Address: TW Hsin-Chu
- Agency: Duane Morris LLP
- Main IPC: H02H9/00
- IPC: H02H9/00 ; H02H9/04 ; H01L27/02
Abstract:
An electrostatic discharge (ESD) protection circuit includes a first inductor coupled to an input node configured to receive an input signal and to an output node. A second inductor is coupled to the input node and to a first ESD protection device, and a third inductor is coupled to the output node and to a second ESD protection device.
Public/Granted literature
- US20160036218A1 ESD PROTECTION CIRCUITS AND METHODS Public/Granted day:2016-02-04
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