Invention Grant
US09543912B2 Buffer circuit having an enhanced slew-rate and source driving circuit including the same
有权
具有包括该缓冲电路的增强型转换速率和源极驱动电路的缓冲电路
- Patent Title: Buffer circuit having an enhanced slew-rate and source driving circuit including the same
- Patent Title (中): 具有包括该缓冲电路的增强型转换速率和源极驱动电路的缓冲电路
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Application No.: US14286131Application Date: 2014-05-23
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Publication No.: US09543912B2Publication Date: 2017-01-10
- Inventor: Sung-Ho Lee
- Applicant: SAMSUNG ELECTRONICS CO., LTD
- Applicant Address: KR Suwon-si, Gyeonggi-do
- Assignee: SAMSUNG ELECTRONICS CO., LTD.
- Current Assignee: SAMSUNG ELECTRONICS CO., LTD.
- Current Assignee Address: KR Suwon-si, Gyeonggi-do
- Agency: F. Chau & Associates, LLC
- Priority: KR10-2013-0112790 20130923
- Main IPC: H03F3/45
- IPC: H03F3/45 ; H03F1/48 ; H03F3/30
Abstract:
A buffer circuit is provided. The buffer circuit includes an operational amplifier and a slew-rate compensating circuit. The operational amplifier amplifies an input voltage signal and generates an output voltage signal. The slew-rate compensating circuit generates a compensation current based on a voltage difference between the input voltage signal and the output voltage signal, and provides the compensation current to a load stage of the operational amplifier.
Public/Granted literature
- US20150084694A1 BUFFER CIRCUIT HAVING AN ENHANCED SLEW-RATE AND SOURCE DRIVING CIRCUIT INCLUDING THE SAME Public/Granted day:2015-03-26
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