Invention Grant
US09543941B2 Radio-frequency switches having frequency-tuned body bias 有权
射频开关具有频率调节的主体偏置

Radio-frequency switches having frequency-tuned body bias
Abstract:
Radio-frequency (RF) switch circuits are disclosed providing improved switching performance. An RF switch system includes at least one field-effect transistor (FET) disposed between a first node and a second node, each FET having a respective gate and body. A resonance circuit connects the body of each of the at least one FET to a reference node. The resonance circuit may be configured to behave as an approximately closed circuit at low frequencies below a selected value and an approximately open circuit at an operating frequency, wherein the approximately closed circuit allows removal of surface charge from the body to the reference node.
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