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US09546321B2 Compositions and methods for selectively etching titanium nitride 有权
用于选择性蚀刻氮化钛的组合物和方法

Compositions and methods for selectively etching titanium nitride
Abstract:
Compositions useful for the selective removal of titanium nitride and/or photoresist etch residue materials relative to metal conducting, e.g., tungsten, and insulating materials from a microelectronic device having same thereon. The removal compositions contain at least one oxidant and one etchant, may contain various corrosion inhibitors to ensure selectivity.
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