Invention Grant
- Patent Title: Semiconductor device manufacturing method and substrate processing method including a cleaning method
- Patent Title (中): 包括清洁方法的半导体器件制造方法和衬底处理方法
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Application No.: US14387978Application Date: 2013-03-13
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Publication No.: US09546422B2Publication Date: 2017-01-17
- Inventor: Yoshihiko Yanagisawa , Tetsuaki Inada
- Applicant: HITACHI KOKUSAI ELECTRIC INC.
- Applicant Address: JP Tokyo
- Assignee: HITACHI KOKUSAI ELECTRIC INC.
- Current Assignee: HITACHI KOKUSAI ELECTRIC INC.
- Current Assignee Address: JP Tokyo
- Agency: Volpe and Koenig, P.C.
- Priority: JP2012-082127 20120330
- International Application: PCT/JP2013/057086 WO 20130313
- International Announcement: WO2013/146278 WO 20131003
- Main IPC: C23C16/52
- IPC: C23C16/52 ; C23C16/44 ; C23C16/455 ; H01J37/32 ; H01L21/02
Abstract:
A semiconductor device manufacturing method includes: a step wherein a processing substrate to be processed is placed on a substrate mounting member that is provided in a processing chamber having a plurality of gas supply regions; a film-forming step wherein a processing gas is supplied to the processing chamber, and the substrate is processed; a step wherein the substrate is carried out from the processing chamber; and a cleaning step wherein the density of the cleaning gas is controlled, while controlling cleaning gas quantities in the gas supply regions, respectively, in a state wherein the substrate is not placed in the processing chamber.
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