Invention Grant
US09548036B2 Scan driving circuit for oxide semiconductor thin film transistors
有权
氧化物半导体薄膜晶体管的扫描驱动电路
- Patent Title: Scan driving circuit for oxide semiconductor thin film transistors
- Patent Title (中): 氧化物半导体薄膜晶体管的扫描驱动电路
-
Application No.: US14424383Application Date: 2015-02-06
-
Publication No.: US09548036B2Publication Date: 2017-01-17
- Inventor: Chao Dai
- Applicant: Shenzhen China Star Optoelectronics Technology Co., Ltd.
- Applicant Address: CN Shenzhen, Guangdong
- Assignee: Shenzhen China Star Optoelectronics Technology Co., Ltd
- Current Assignee: Shenzhen China Star Optoelectronics Technology Co., Ltd
- Current Assignee Address: CN Shenzhen, Guangdong
- Agent Andrew C. Cheng
- Priority: CN201410624066 20141107
- International Application: PCT/CN2015/072361 WO 20150206
- International Announcement: WO2016/070516 WO 20160512
- Main IPC: G09G3/36
- IPC: G09G3/36
Abstract:
The present invention provides a scan driving circuit for oxide semiconductor thin film transistors, a pull-down holding circuit part (600) employed in the scan driving circuit for the oxide semiconductor thin film transistors comprises a main inverter and an auxiliary inverter. By introducing a constant low voltage level (DCL) and setting the constant low voltage level (DCL)
Public/Granted literature
- US20160343330A1 SCAN DRIVING CIRCUIT FOR OXIDE SEMICONDUCTOR THIN FILM TRANSISTORS Public/Granted day:2016-11-24
Information query
IPC分类:
