Invention Grant
- Patent Title: Voltage controlled spin transport channel
- Patent Title (中): 电压控制自旋传输通道
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Application No.: US13690803Application Date: 2012-11-30
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Publication No.: US09548092B2Publication Date: 2017-01-17
- Inventor: Curt Andrew Richter , Hyuk-Jae Jang
- Applicant: The National Institute of Standards and Technology, The United States of America, as Represented by the Secretary of Commerce
- Applicant Address: US DC Washington
- Assignee: The National Institute of Standards and Technology, The United States of America, as represented by the Secretary of Commerce
- Current Assignee: The National Institute of Standards and Technology, The United States of America, as represented by the Secretary of Commerce
- Current Assignee Address: US DC Washington
- Agency: Carlson, Gaskey & Olds, P.C.
- Main IPC: G11C11/14
- IPC: G11C11/14 ; G11C11/16 ; H01L43/08 ; B82Y10/00 ; H01L29/66 ; H01L27/22

Abstract:
A spin transport channel includes a dielectric layer contacting a conductive layer. The dielectric layer includes at least one of a tantalum oxide, hafnium oxide, titanium oxide, and nickel oxide. An intermediate spin layer contacts the dielectric layer. The intermediate spin layer includes at least one of copper and silver. The conductive layer is more electrochemically inert than the intermediate spin layer. A polarizer layer contacts the intermediate spin layer. The polarizer layer includes one of a nickel-iron based material, iron, and cobalt based material. The conductive layer and intermediate layer are disposed on opposite sides of the dielectric layer. The dielectric layer and the polarizer layer are disposed on opposite sides of the intermediate spin layer. The intermediate spin layer is arranged to form a conducting path through the dielectric layer configured to transport a plurality of electrons. Each of the plurality of electrons maintains a polarized electron spin.
Public/Granted literature
- US20140153327A1 VOLTAGE CONTROLLED SPIN TRANSPORT CHANNEL Public/Granted day:2014-06-05
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