Invention Grant
US09548101B2 Retention optimized memory device using predictive data inversion
有权
使用预测数据反演的保留优化的存储器件
- Patent Title: Retention optimized memory device using predictive data inversion
- Patent Title (中): 使用预测数据反演的保留优化的存储器件
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Application No.: US15065378Application Date: 2016-03-09
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Publication No.: US09548101B2Publication Date: 2017-01-17
- Inventor: David Edward Fisch , William C. Plants , Kent Stalnaker
- Applicant: Invensas Corporation
- Applicant Address: US CA San Jose
- Assignee: Invensas Corporation
- Current Assignee: Invensas Corporation
- Current Assignee Address: US CA San Jose
- Main IPC: G11C11/24
- IPC: G11C11/24 ; G11C11/4091 ; G11C29/52 ; G11C7/02 ; G11C7/10 ; G11C11/4096 ; G11C7/00 ; G11C11/408 ; G11C7/06

Abstract:
A method for storing data. The method includes providing an addressable memory including a memory space, wherein the memory space includes a plurality of memory cells. The method includes configuring the addressable memory such that a majority of the plurality of memory cells in the memory space stores internal data values in a preferred bias condition when a first external data state of one or more external data states is written to the memory space, wherein the first external data state is opposite the preferred bias condition.
Public/Granted literature
- US20160189765A1 Retention optimized memory device using predictive data inversion Public/Granted day:2016-06-30
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