Invention Grant
- Patent Title: Variable resistance element, semiconductor device having variable resistance element, semiconductor device manufacturing method, and programming method using variable resistance element
- Patent Title (中): 可变电阻元件，具有可变电阻元件的半导体器件，半导体器件制造方法和使用可变电阻元件的编程方法
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Application No.: US14385623Application Date: 2013-03-14
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Publication No.: US09548115B2Publication Date: 2017-01-17
- Inventor: Munehiro Tada , Toshitsugu Sakamoto , Makoto Miyamura
- Applicant: Munehiro Tada , Toshitsugu Sakamoto , Makoto Miyamura
- Applicant Address: JP Tokyo
- Assignee: NEC CORPORATION
- Current Assignee: NEC CORPORATION
- Current Assignee Address: JP Tokyo
- Priority: JP2012-060864 20120316
- International Application: PCT/JP2013/001698 WO 20130314
- International Announcement: WO2013/136798 WO 20130919
- Main IPC: G11C13/00
- IPC: G11C13/00 ; H01L45/00 ; H01L27/10
Abstract:
This variable resistance element is provided with a variable resistance film, a first electrode, which is disposed in contact with one surface of the variable resistance film, and a second electrode, which is disposed in contact with the other surface of the variable resistance film. The first and the second electrodes have corner portions, respectively, and the distance between the corner portions of the first and the second electrodes is set equal to the shortest distance between the first and the second electrodes. Furthermore, the variable resistance element has a third electrode, which is disposed on the one surface of the variable resistance film.
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