A resistive non-volatile memory cell is programmed. A programming voltage is applied to a first terminal of the resistive non-volatile memory cell. Sensing, during the applying the programming voltage, determines if the resistive non-volatile memory cell has been programmed. Current is limited through the resistive non-volatile memory cell to a first magnitude. After a predetermined time, if the sensing has not detected that the resistive non-volatile memory cell has been programmed, the current through the resistive non-volatile memory cell is limited to a second magnitude greater than the first magnitude. The resistive non-volatile memory cell is also erased.