Invention Grant
US09548122B2 Level shift driver circuit capable of reducing gate-induced drain leakage current 有权
电平移位驱动电路能够减少栅极引起的漏极漏电流

Level shift driver circuit capable of reducing gate-induced drain leakage current
Abstract:
A level shift driver circuit comprises a level shift circuit and a driver circuit. The driver circuit comprises a first and a second P-type transistors and a first and a second N-type transistors coupled in series. When a first input signal of the level shift circuit is at an operative voltage, the level shift circuit turns off the second N-type transistor. A control terminal of the first N-type transistor receives the operative voltage to avoid a gate-induced drain leakage current of the second N-type transistor. When the first input signal is at a system base voltage, the level shift circuit turns off the first P-type transistor. A control terminal of the second P-type transistor receives the operative voltage to avoid a gate-induced drain leakage current of the first P-type transistor.
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