Invention Grant
US09548122B2 Level shift driver circuit capable of reducing gate-induced drain leakage current
有权
电平移位驱动电路能够减少栅极引起的漏极漏电流
- Patent Title: Level shift driver circuit capable of reducing gate-induced drain leakage current
- Patent Title (中): 电平移位驱动电路能够减少栅极引起的漏极漏电流
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Application No.: US14711765Application Date: 2015-05-13
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Publication No.: US09548122B2Publication Date: 2017-01-17
- Inventor: Po-Hao Huang
- Applicant: eMemory Technology Inc.
- Applicant Address: TW Hsin-Chu
- Assignee: eMemory Technology Inc.
- Current Assignee: eMemory Technology Inc.
- Current Assignee Address: TW Hsin-Chu
- Agent Winston Hsu; Scott Margo
- Main IPC: G11C16/08
- IPC: G11C16/08 ; G11C17/16 ; G11C17/18 ; G11C16/10 ; G11C16/26 ; G11C17/04 ; G11C17/08 ; H01L23/528 ; H01L29/93 ; H01L27/112 ; H01L27/06 ; H01L29/10 ; H01L29/49 ; H01L27/115 ; H03K3/356 ; G11C17/14 ; G11C29/00 ; H01L23/525

Abstract:
A level shift driver circuit comprises a level shift circuit and a driver circuit. The driver circuit comprises a first and a second P-type transistors and a first and a second N-type transistors coupled in series. When a first input signal of the level shift circuit is at an operative voltage, the level shift circuit turns off the second N-type transistor. A control terminal of the first N-type transistor receives the operative voltage to avoid a gate-induced drain leakage current of the second N-type transistor. When the first input signal is at a system base voltage, the level shift circuit turns off the first P-type transistor. A control terminal of the second P-type transistor receives the operative voltage to avoid a gate-induced drain leakage current of the first P-type transistor.
Public/Granted literature
- US20160013776A1 LEVEL SHIFT DRIVER CIRCUIT CAPABLE OF REDUCING GATE-INDUCED DRAIN LEAKAGE CURRENT Public/Granted day:2016-01-14
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